BAT85.PDF

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BAT85
Schottky Diodes
DO-35
min. 1.083 (27.5)
FEATURES
♦
For general purpose applications.
♦
This diode features low turn-on volt-
max.
∅
.079 (2.0)
max. .150 (3.8)
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
with type designation BAS85.
Cathode
Mark
min. 1.083 (27.5)
♦
This diode is also available in the MiniMELF case
max.
∅
.020 (0.52)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Continuous Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Peak Forward Current at T
amb
= 25 °C
Surge Forward Current
at t
p
< 1 s, T
amb
= 25 °C
Power Dissipation at T
amb
= 65 °C
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
1)
Value
30
200
1)
300
1)
600
1)
200
1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
mA
mW
°C
°C
°C
V
R
I
F
I
FM
I
FSM
P
tot
T
j
T
amb
T
S
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
4/98
BAT85
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Breakdown Voltage
tested with 10
µA
Pulses
Forward Voltage
Pulse Test t
p
< 300
µs, δ
< 2%
at I
F
= 0.1 mA
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 30 mA
at I
F
= 100 mA
Leakage Current
at V
R
= 25 V
Capacitance
at V
R
= 1 V, f = 1 MHz
Thermal Resistance
Junction to Ambient Air
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA to I
R
= 1 mA
1)
Min.
30
Typ.
–
Max.
–
Unit
V
V
(BR)R
V
F
V
F
V
F
V
F
V
F
I
R
C
tot
R
thJA
t
rr
–
–
–
–
–
–
–
–
–
–
–
–
0.5
–
–
–
–
–
0.24
0.32
0.4
–
0.8
2
10
0.43
1)
5
V
V
V
V
V
µA
pF
K/mW
ns
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.

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