BC807-25W-D.PDF

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DATA SHEET
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General Purpose
Transistors
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
BC807-25W, BC807-40W
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
2
SC−70
CASE 419
STYLE 3
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−500
Unit
V
V
V
mAdc
1
5x
460
272
−55
to +150
mW
°C/W
°C
M
G
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
Unit
5x M
G
G
= Device Code
x = B or C
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm
2
.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
March, 2022
−
Rev. 5
1
Publication Order Number:
BC807−25W/D
BC807−25W, BC807−40W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Collector
−Emitter
Breakdown Voltage
(V
EB
= 0, I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
Collector Cutoff Current
(V
CB
=
−20
V)
(V
CB
=
−20
V, T
J
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−100
mA, V
CE
=
−1.0
V)
(I
C
=
−500
mA, V
CE
=
−1.0
V)
Collector
−Emitter
Saturation Voltage
(I
C
=
−500
mA, I
B
=
−50
mA)
Base
−Emitter
On Voltage
(I
C
=
−500
mA, V
CE
=
−1.0
V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
f
T
C
obo
100
−
−
10
−
−
MHz
pF
V
CE(sat)
V
BE(on)
BC807−25, SBC807−25
BC807−40, SBC807−40
h
FE
−
160
250
40
−
−
−
−
−
−
−
400
600
−
−0.7
−1.2
V
V
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
−45
−50
−5.0
−
−
−
−
−
−
V
V
V
Symbol
Min
Typ
Max
Unit
−
−
−
−
−100
−5.0
nA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BC807−25WT1G
SBC807−25WT1G*
BC807−25WT3G
BC807−40WT1G
SBC807−40WT1G*
BC807−40WT3G
5C
SC−70
(Pb−Free)
5B
SC−70
(Pb−Free)
Specific Marking
Package
Shipping
†
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS
−
BC807−25W, SBC807−25W
500
400
300
200
−55°C
100
0
25°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 4. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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3
BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS
−
BC807−25W, SBC807−25W
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
T
J
= 25°C
-0.8
I
C
=
-500 mA
-0.6
-0.4
I
C
= -300 mA
-0.2
I
C
= -10 mA
0
-0.01
-0.1
I
C
= -100 mA
-1.0
-10
I
B
, BASE CURRENT (mA)
-100
Figure 6. Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+1.0
q
VC
for V
CE(sat)
0
100
C, CAPACITANCE (pF)
C
ib
10
-1.0
-2.0
q
VB
for V
BE
C
ob
-1.0
-10
-100
I
C
, COLLECTOR CURRENT
-1000
1.0
-0.1
-1.0
-10
V
R
, REVERSE VOLTAGE (VOLTS)
-100
Figure 7. Temperature Coefficients
Figure 8. Capacitances
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BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS
−
BC807−40W, SBC807−40W
1000
800
700
600
500
400
300
200
100
0
0.001
0.01
0.1
1
−55°C
25°C
150°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
900
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 12. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
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